Last edited by Vomi
Wednesday, July 8, 2020 | History

2 edition of Studies of heterorpitaxial films of CdTe and CMT on GaAs and Si substrates found in the catalog.

Studies of heterorpitaxial films of CdTe and CMT on GaAs and Si substrates

Richard Chester

Studies of heterorpitaxial films of CdTe and CMT on GaAs and Si substrates

by Richard Chester

  • 18 Want to read
  • 26 Currently reading

Published by University of Birmingham in Birmingham .
Written in English


Edition Notes

Thesis (Ph.D) - University of Birmingham, School of Metallurgy and Materials, Faculty of Engineering.

Statementby Richard Chester.
ID Numbers
Open LibraryOL17148969M

  In addition to the decline in production, substrate pricing also fell and this dropped market revenues to $ million, a decline of slightly more than 8%. Driven by increasing growth in handsets, we believe the demand for SI GaAs epitaxial substrates will grow with a . High-quality crack-free GaN epitaxial films have been grown on Si substrates by metal organic chemical vapor deposition (MOCVD) using a two-step growth of AlN buffer layer. The AlN buffer layer is first grown at a V/III ratio of to obtain a 3 dimensional (3D) growth mode, and then the V/III ratio is dec.

SiC is a candidate material for micro- and nano-electromechanical systems (MEMS and NEMS). In order to understand the impact that the growth rate has on the residual stress of CVD-grown 3C-SiC hetero-epitaxial films on Si substrates, growth experiments were performed and the resulting stress was evaluated. Film growth was performed using a two-step growth process with propane and silane as Cited by: 2. Finite width effect of thin-films buckling on compliant substrate: Experimental and theoretical studies Hanqing Jiang, Dahl Young Khang, Huiyang Fei, Hoonsik Kim, Yonggang Huang, Jianliang Xiao, John A. Cited by:

The interface stress at thin film semiconductor heterostructures has been examined for three technologically important ZnSSe/GaAs, InGaPAs/GaAs, and AlGaAs/GaAs heterostructures. For characterization of the interface stress we have developed a new high-sensitivity method using the characteristic Cr-related luminescence lines in GaAs by: 1. Stress nature investigation on heteroepitaxial 3C–SiC film on () Si substrates Ruggero Anzalonea) and Massimo Camarda IMM-CNR, sezione di Catania, Stradale Primos , Catania, Italy Christopher Locke and Josè Carballo Department of Electrical Engineering, University of South Florida, Tampa, Florida


Share this book
You might also like
relative potency of carcinogenic tars and oils

relative potency of carcinogenic tars and oils

Post Office Aberdeen directory

Post Office Aberdeen directory

Czech Step By Step

Czech Step By Step

Charlottes row

Charlottes row

How to Pitch Fast Pitch Softball for Both Men & Women

How to Pitch Fast Pitch Softball for Both Men & Women

determination of the elastic scattering cross section for triton bombardment of tritium

determination of the elastic scattering cross section for triton bombardment of tritium

University library.

University library.

Richelieu Hotel Montreal, I.B. Durocher Proprietor

Richelieu Hotel Montreal, I.B. Durocher Proprietor

English and French in the workplace : what federal employees need to know =

English and French in the workplace : what federal employees need to know =

BONATLA PROPERTY HOLDINGS LTD.

BONATLA PROPERTY HOLDINGS LTD.

Just what Ive always wanted

Just what Ive always wanted

Studies of heterorpitaxial films of CdTe and CMT on GaAs and Si substrates by Richard Chester Download PDF EPUB FB2

Strain relaxation in CdTe(1 1 1)A/GaAs(1 1 1)A films. It is believed that strain in epitaxial films decreases with increase in thickness, and many modelling and characterisation studies of CdTe(1 0 0)/GaAs(1 0 0) films have been carried out.Raman spectroscopy has shown that the features of elastic strain near the interface are different from those deep in the film, and one can assume Cited by:   Epitaxial CdTe thin films were grown on GaAs/Si() substrates by metalorganic chemical vapor deposition using thin GaAs as a buffer layer.

The interfaces were investigated using high-resolution transmission electron microscopy and geometric phase analysis strain mapping. It was observed that dislocation cores exist at the CdTe/GaAs interface with periodic by: 1. Highlights Epitaxial () CdTe thin film was successfully grown on a () Si substrate using thin (2 nm) GaAs buffer layer.

The thin GaAs buffer layer effectively absorbed any strain coming from the large lattice mismatch between a CdTe layer and a Si substrate. High-resolution transmission electron microscopy studies revealed a periodic distribution of dislocations due to lattice mismatch Cited by: 3. Thin epitaxial GaAs films, with thickness varying from to nm and different Si doping levels, were grown at °C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and analyzed by low-temperature photoluminescence (PL) spectroscopy.

All spectra of thin GaAs on Ge show two different structures, one narrow band-to-band (B2B). Experimental evidence of thermal-expansion-dependent residual stress is presented for CdTe/Si(2 1 1), CdTe/Ge(2 1 1), and CdTe/GaAs(2 1 1) films based on X-ray diffraction studies.

Growth of Thick Epitaxial CdTe Films by Close Space Sublimation Article in Journal of Electronic Materials 38(8) August with 22 Reads How we measure 'reads'.

The growth characteristics of thick () CdTe epitaxial layers of a thickness up to µm on a () GaAs substrate in a metal-organic vapor-phase epitaxy (MOVPE) system and fabrication of CdTe/n+-GaAs heterojunction diodes for their possible applications in low-energy x-ray imaging detectors are reported.

The grown epilayers were of high structural quality as revealed from the x-ray double Cited by: Cadmium sulphide (CdS) thin films have been deposited by chemical bath deposition method (CBD) on CdTe substrates.

The temperature of the deposition was varied from 40 oC to 70oC under stirring, pH of complexing agent about and doping by CdCl2. The morphology was composed of small columnar crystals, characterized by SEM.

The crystallographic structure contains a mixture of hexagonal Author: C. Suwattanaphiboon, N. Suttisiri, Ekachai Hoonnivathana, C. Kunsombat. Thin films of undoped and doped CdTe with thickness around ±10nm were deposited by thermal evaporation technique onto () p-GaAs wafer.

The effect of both Al and Sb dopant percentages (, and ) and substrate temperatures (RT and K) on the optoelectronic properties of CdTe/p-GaAs heterojunction was : F.Y. Al Shaikley,ar, -Douri.

Device quality GaAs‐AlGaAs thin films have been obtained on Si substrates, using a novel approach called eutectic‐metal‐bonding (EMB). This involves the lattice‐matched growth of GaAs‐AlGaAs thin films on Ge substrates, followed by bonding onto a Si wafer.

The Ge substrates are selectively removed by a CF4/O2 plasma etch, leaving high‐quality GaAs‐AlGaAs thin films on Si by: gate dielectrics on Si or on higher mobility substrates, and among these, atomic layer deposition (ALD) has been widely adopted for its ability to provide high-k films with superior Journal of Physics D: Applied Physics Electrical and band structural analyses of Ti 1−xAl xO y.

The morphology and microstructure of GaAs thin films deposited on low-cost Mo foils were investigated. The films were revealed to be polycrystalline, with varying grain size.

The grain size increased monotonically with deposition temperature, but was not affected by the type of dopant used. these studies it seems that a general agreement regarding the properties and the growth of Fe3O4 films on GaAs substrate is yet to be achieved.

In the present paper we study the structural, electrical, and magnetic transport properties of Fe3O4 thin film grown by pulsed laser deposition technique on GaAs () substrate.

Experimental DetailsCited by: Bonding III-V semiconductor thin films with Si substrates using the epitaxially lifted-off (ELO) tech-nique has been a subject of great interest in recent years.1 Because the lifted-off films are usually very thin, the III-V devices can be more easily integrated with Si devices using this technique than using other wafer bonding methods.

CdTe () pole gures grown on ZnTe layers with various deposition times and the corresponding B/(A+B) intensity ratio.

80 () pole gure for ZnTe from a sample with a 2 minute CdTeAuthor: Carley Miki. Device simulation is used to investigate the current-voltage efficiency performance in CdTe/CdS photovoltaic solar cell. The role of several limiting factors such as back contact Schottky barrier and its relationship to the doping density and layer thickness is examined.

The role of surface recombination velocity at back contact interface and extended CdTe layer is by: Metal organic vapour phase epitaxy has been investigated for growth of Bi 2 Te 3 and Sb 2 Te 3 films on () GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources.

High resolution TEM and x-ray diffraction patterns revealed that films had single crystalline phases with a preferential c-orientation and layered structures resulting from the Cited by: 4.

Epitaxial Ge films were grown on GaAs (), (), and () substrates by using ultra-high vacuum chemical vapor deposition and studied with various methods. The incubation times and growth rates were quite different for these three GaAs substrates because the surface arsenic coverage on GaAs and hydrogen desorption energy on Ge are different for each by: 3.

GaN films were grown on ()GaAs substrates by radio frequency magnetron sputtering in an ambient of argon and nitrogen, using gallium target. The structural properties of the GaN films were investigated by conventional (theta) - 2(theta) x-ray diffraction, high Author: Qixin Guo, Akira Okada, Mitsuhiro Nishio, Hiroshi Ogawa.

Here, we report on the stabilization of WZ-MnTe thin films on amorphous indium zinc oxide (a-IZO) substrates relevant to photovoltaic applications. Optical spectroscopy of the WZ-MnTe films shows a wide direct band gap of E g = eV, while photoelectron spectroscopy (PES) measurements reveal weak p-type doping with a Fermi level of eV Cited by: 5.

Novel CdTe Cell Fabrication Process with Potential for Low Cost and High Throughput X. Wu and P. Sheldon National Renewable Energy Laboratory, Cole Blvd., Golden, CO Abstract There are several production disadvantages inherent in the.

1. Phys Rev B Condens Matter. Sep 15;48(12) Band offsets and strain in CdTe-GaAs heterostructures. Bratina G, Sorba L, Antonini A, Ceccone G, Nicolini R, Biasiol G, Franciosi A, Angelo JE, Gerberich by: Doping is a notable factor to improve the performance of CdTe/CdS heterojunction solar cell.

Graphite doped CdTe/CdS heterojunction on Si (1 1 1) substrate has systematically fabricated by thermal evaporator method under medium vacuum ( torr) condition. Characterization of doped CdTe/CdS film was carried out by various diagnostic techniques such as X-ray diffraction (XRD) exhibits the.